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CURRICULUM VITAE Dr. Muhammad Waqas Iqbal HoD, Department of Physics Riphah International University, Lahore E-mail: [email protected] , [email protected] Phone:0344-4600751, 0300-0720875 Research Interest

     

Graphene and 2D- Materials (h-BN, MoS2, WS2, MoTe2, WSe2), based hetrostructure. Spin and charge transport in materials Mesoscopic Physics Nanomaterials and Polymers Fabrication and characterization of semiconductor devices (diodes, FET and sensors). Low temperature vertical spin transport, Quantum Hall transport, Phase coherent transport, Chemical and gas doping of 2D- Materials (Graphene, MoS2, WS2, MoTe2, WSe2). Flexible and conducting fabrics Flexible and transparent electronic Growth of 1D and 2D Materials

    Educational

Ph.D. in Physics (March 2011 - June 2015)

Qualifications

Department of Physics and Graphene Research Institute, Sejong University, Seoul 143-747, South Korea Thesis Title: Tuning the electrical and optical properties of two-dimensional atomic layer materials Ph.D Mentor: Prof. Jonghwa Eom M.Sc. in Nanotechnology and Nanoelectronics Devices (2009- 2010) Advanced Technology Institute, Faculty of Engineering and Physical Sciences, University of Surrey, Guildford, United Kingdom. Thesis Title: Current through Network of Carbon Nanotubes in Transparent Electronics M.Sc. Mentor: Dr. David Carey M.Sc. (Physics) (2007), Passed with first division Specialization in Electronics, University of the Punjab.

ACHIEVEMENTS

 

Academic Achievements: Best student of the year in 2007. Best Thesis project Award in 2010.

Awards and



Fellowships

Chairman- (from 08.2016- to due date) Department of Physics, Riphah International University, Lahore



National Research Foundation of Korea (NRF) Fellowship- from Department of Physics and Graphene Research Institute, Sejong University, in March 2011 funded by the Ministry of Science.



Nano-Material Technology Development Program Fellowshipfrom Department of Physics and Graphene Research Institute, Sejong University, in March 2011.



Priority Research Center ProgramFrom Department of Physics and Graphene Research Institute, Sejong University, in March 2013.



Scholarships for International Students- from Advanced Technology Institute, Faculty of Engineering and Physical Sciences, University of Surrey, Guildford, United kingdom in 2010.



Best Project Award- from Advanced Technology Institute, Faculty of Engineering and Physical Sciences, University of Surrey, Guildford, United Kingdom in 2010.



Best Poster Award- International conference on electronic materials and nanotechnology for green environment, Jejuna, Korea November 2014.

Research

Ph.D: (February 2011 - August 2015) - Ph.D degree awarded on topic

Experience

“Tuning the Electrical and optical properties of two dimension-Atomic layered Materials” under the supervision of Prof. Jonghwa Eom Research Associate: (from 03.2011-08.2015) -Department of Physics and Graphene Research Institute, Sejong University, Seoul 143-747, South Korea. In this period, I worked on Graphene –h-BN hetrosturctures.

Teaching

Assistant Professor: (from 08.2016- to due date) - Department of Physics,

Experience

Riphah International University, Lahore Assistant Professor: (from 9.2015-08.2016) -Department of Physics, college of Science, Majmaah University, Al-Zul0fi, Saudi Arabia Teaching Fellow: (from 2007- 2011) Advanced Technology Institute, Faculty of Engineering and Physical Sciences, University of Surrey, Guildford, United Kingdom.

SKILLS

Experimental Techniques: 

Transfer of exfoliated graphene on pattern electrode



Transfer of CVD graphene on any desired substrates



Growth of 1D and 2D materials by Chemical vapor deposition



Electron beam Lithography



Low temperature Measurements



Photolithography



Atomic Force Microscope.



Lock-in amplifier



Scanning Electron Microscope.



Raman and U.V. Visible Spectrophotometer.



Vacuum Coating Unit.



Spin Coating Unit.



Plasma Instrument.



Ar milling

RESEARCH SUPERVISION M.Phil Physics:

1. Anaiza Riaz, Deposition of Titanium Nitride Thin Films Using Glow Discharge Plasma, Riphah International University, 2016, Completed 2. Syed Adnan Ijaz, Pulse Laser Ablation of Metallic Targets in Liquid Confined Environments, Riphah International University, 2016, Completed

3. Kashif Javed, Duplex Treatment of Stainless Steel by Using DC Glow Discharge Plasma, Riphah International University, 2016, Completed 4. Khayam Ismail, Synthesis and characterization of Cd-CdS micro/nano heterostructures, Riphah International University, 2016, Completed 5. Muhammad Waleed Amjad, Large Tunable Optical Properties by Mn(II) aggregates in Mn-doped ZnS nanowires Riphah International University, 2016, Completed 6. Muhammad Imran, Effect of e-beam irradiation on graphene field effect transistor sandwich between h-BN layers, Riphah International University, 2016, Completed 7. Amina Khalid, Effect of Ammonia Doping on Transport Properties of Graphene Field effect Transistor, Riphah International University, 2016, Continue 8. Aliya Amin, Tailoring the Electrical Properties of MoTe2 Field Effect Transistor by Chemical Doping, Riphah International University, 2017, Continue 9. Ehsan Elahi, Control p-type doping of MoTe2 Field Effect Transistor, Riphah International University, 2017, Continue 10. Kinza Shahzad, Gate dependent Raman Spectra of WS2 Field Effect Transistor, Riphah International University, 2017, Continue 11. Razia Sultana, Control Doping of graphene with Ag–Nano particles, Riphah International University, 2017, Continue 12. Shazia Razzaq, Tuning the electrical properties of graphene layers by KOH and KBr by chemical doping, Riphah International University, 2017, Continue 13. Amir Shahzad, Facile growth of magnetic Nanoparticles by Green Synthesis, Riphah International University, 2017, Continue 14. Muhammad Awais, Synthesis and characterization of Anatase TiO2 nano particles

15. Muhammad Mehboob Alam, Synthesis And Characterization Of Magnetite Nanoscale Particles, Riphah International University, 2017, Continue 16. Asia Marriam, Tuning the electrical and photo-electrical properties of MoTe2-FETs by gas doping, Riphah International University, 2017, Continue 17. Rehan Akber, Gate dependent Raman spectra of MoTe2 Field Effect Transistor, Riphah International University, 2017, Continue 18. Usman Ejaz, Contact Resistance Engineering of MoTe2 FET by using Different Work Function Materials, Riphah International University, 2017, Continue 19. Muhammad Shafique, Annealing Effect on graphene field effect transistor in different Atmosphere, University of Lahore, 2017, Completed 20. Ikram Wazir, Effect of selective p-type doping on transport properties of graphene field effect transistor, University of Lahore, 2017, Completed

RESEARCH GRANTS 1. A progressive route for Doping of MoTe2 Field effect Transistor, Higher Education Commission 2017 (≈Rs. 0.47 million).

WORKSHOP ORGANIZED 1. One day Workshop on Computational Material Science, Riphah International University, 2017 PUBLICATIONS IN REFEREED JOURNAL Total citations:495, h-index:13

Impact Factor:150

1. Muhammad Arshad Kamran, Abdul Majid, Thamer Alharbi, Muhammad Waqas Iqbal, Muhammad Waleed Amjad, Ghulam Nabi, Shuangyang Zou, Bingsuo Zou, Large

Tunable Luminescence by Mn(II) aggregates in Mn-doped ZnS nanobelts, Journal of Materials Chemistry C, 2017 (I.F=5.006) 2. M. Z. Iqbal, G. Hussain, S. Siddique, M. W. Iqbal, Interlayer reliant magnetoresitance in graphene spin valve, Journal of Magnetism and Magnetic Materials, 330–333, 422, 2017. (Impact factor =2.357) 3. Muhammad Zahir Iqbal, Nadia Anwar, Salma Siddique, Muhammad Waqas Iqbal, Tassadaq Hussain. Formation of pn-junction with stable n-doping in graphene field effect transistors using e-beam irradiation, Optical Materials,2017(I.F=2.183) 4. Muhammad Farooq Khan, Muhammad Arslan Shehzad, Muhammad Zahir Iqbal, Muhammad Waqas Iqbal, Ghazanfar Nazir, Yongho Seo, Jonghwa Eom. Facile route to a high-quality graphene/MoS2 vertical field effect transistor with gate-modulated photocurrent response Journal of Materials Chemistry C, 2017 (I.F=5.006) 5. Muhammad Zahir Iqbal, Ghulam Hussain, Salma Siddique, Muhammad Waqas Iqbal, Enhanced magnetoresistance in graphene spin valve, Journal of Magnetism and Magnetic Materials, 2017 (I.F=2.357) 6. Muhammad Zahir Iqbal, Ghulam Hussain, Salma Siddique, Muhammad Waqas Iqbal, Graphene Spin Valve: An Angle Sensor, Journal of Magnetism and Magnetic Materials, 2017 (I.F=2.357) 7. M. W. Iqbal, M Zahir Iqbal, M Farooq Khan, M Arslan Shehzad, Yongho Seo, Jong Hyun Park, Chanyong Hwang, Jonghwa Eom. High-mobility and air-stable single-layer WS2 field-effect transistors sandwiched between chemical vapor deposition-grown hexagonal BN films. Nature Scientific Reports, 5,10699, 2015. (I.F=5.578)

8. Muhammad Zahir Iqbal, Salma Siddique, Ghulam Hussain, Muhammad Waqas Iqbal, Room temperature spin valve effect in NiFe/Gr-hBN/Co magnetic tunnel junction, Journal of Materials Chemistry C, 2016 (I.F=5.006) 9. Muhammad Zahir Iqbal, Ghulam Hussain, Salma Siddique, Muhammad Waqas Iqbal, Ghulam Murtaza, Shahid Mahmood Ramay, Interlayer quality dependent graphene spin valve, Journal of Magnetism and Magnetic Materials, 2016 (I.F=2.357) 10. M. Z. Iqbal, M. W. Iqbal, M. F. Khan, J. T. Nam, K. S. Kim, Jonghwa Eom, Interaction driven quantum Hall effect in artificially stacked graphene bilayers, Nature Scientific Reports, 24815, 2016 (I.F=5.578) 11. Muhammad Arshad Kamran, Ghulam Nabib, Abdul Majida, Muhammad Waqas Iqbal, Thamer Alharbi, Yongyou Zhangd, Bingsuo Zoud, Tunable emission and conductivity enhancement by tellurium doping in CdS nanowires for optoelectronic applications Physica E: Low-dimensional Systems and Nanostructures, 81-87, 2016(I.F=1.8) 12. Muhammad Waqas Iqbal, Muhammad Zahir Iqbal, Muhammad Farooq Khan, Muhammad Arshad Kamran, Abdul Majid, Thamer Alherbi, Jonghwa Eom, Tailoring the Electrical and Photo-electrical Properties of WS2 Field Effect Transistor by Selective ntype Chemical Doping. RSC Advances, 24675-24682, 2016 Accepted (I.F=3.84) 13. Muhammad Zahir Iqbal, Muhammad Waqas Iqbal, Salma Siddique, Muhammad Farooq Khan, Shahid Mahmood Ramay. Room temperature spin valve effect in NiFe/WS2/Co junctions. Nature Scientific Reports. 21038, 2016 (I.F=5.578) 14. Muhammad Arslan Shehzad, Dung Hoang Tien, M Waqas Iqbal, Jonghwa Eom, JH Park, Chanyong Hwang, Yongho Seo Nematic Liquid Crystal on a Two Dimensional

Hexagonal Lattice and its Application. Nature Scientific Reports,13331, 2015. (I.F=5.578) 15. MZ Iqbal, MW Iqbal, MF Khan, J Eom Ultraviolet-light-driven doping modulation in chemical vapor deposition grown graphene- Physical Chemistry Chemical Physics, 17, 20551-20556,2015 (I.F=4.493) 16. M. W. Iqbal, M. Z. Iqbal, M. F. Khan, M. A. Shehzad, Y Seo, Jonghwa Eom Deepultraviolet-light-driven reversible doping of WS2 field-effect transistors. Nanoscale, 7, 747, 2015. (I.F=7.394) 17. M. W. Iqbal, M. Z. Iqbal, Xiaozhan Jin, Chanyong Hwang, Jonghwa Eom, Superior characteristics of graphene field effect transistor enclosed by chemical-vapor-depositiongrown hexagonal boron nitride, Journal of Materials Chemistry, 2014. DOI: 10.1039/c4tc01176g. (I.F=4.696) 18. M. W. Iqbal, M. Z. Iqbal, Xiaozhan Jin, Chanyong Hwang, Jonghwa Eom, Edge oxidation effect of chemical vapor deposition grown graphene nanoconstriction, ACS Applied Materials & Interfaces, 4207-4213, 6(6), 2014. (I.F=7.145) 19. M. W. Iqbal, A. K. Singh, M. Z. Iqbal, Jonghwa Eom, Raman fingerprint of doping due to metal adsorbates on graphene, Journal of Physics Condensed Matter, 335301, 24, 2012. (I.F=2.223) 20. M. W. Iqbal, M. Z. Iqbal, M. F. Khan, Jonghwa Eom, Modification of structural and electrical properties graphene layers by Pt adsorbates, Science and Technology of Advanced Materials, 2014. (I.F=3.433) 21. M. Z. Iqbal, M. W. Iqbal, Xiaozhan Jin, Chanyong Hwang, Jonghwa Eom Interlayer dependent polarity of magnetoresistance in graphene spin valves - Journal of Materials Chemistry C,3,298 2015. (I.F=4.696)

22. M. Z. Iqbal, M. W. Iqbal, Jae Hong Lee, Yong Seung Kim, Seunghyun Chun, Jonghwa Eom, Spin valve effect of NiFe/graphene/NiFe junctions, Nano Research, 373-380, 6(5), 2013. (I.F=7.392) 23. K. Singh, M. W. Iqbal, V. K. Singh, M. Z. Iqbal, Jae Hong Lee, Seung-Hyun Chun, Koo Shin, Jonghwa Eom, Molecular n-doping of chemical vapor deposition grown graphene, Journal of Materials Chemistry, 15168, 22, 2012. (I.F=4.696) 24. M.F Khan, M.W. Iqbal, MZ Iqbal, MA Shehzad, Y Seo, Jonghwa Eom. Photocurrent response of MoS2 field-effect transistor by deep ultraviolet light in atmospheric and N2 gas environments. ACS applied materials & interfaces, 6, 21645 2014. (I.F=7.145) 25.

S. Hussain, M.W. Iqbal, J Park, M. Ahmad, J Singh, Jonghwa Eom, Jongwan Jung A. Physical and electrical properties of graphene grown under different hydrogen flow in low pressure chemical vapor deposition Nanoscale research letters,546,9 2014. (I.F=2.481)

26. G. R. Turpu, M. W. Iqbal, M. Z. Iqbal, Jonghwa Eom, Relaxation in bi-stable resistive states of chemical vapor deposition grown graphene, Thin Solid Films, 468-472, 522, 2012. (I.F=1.888) 27. M. Z. Iqbal, M. W. Iqbal, Jonghwa Eom, Muneer Ahmad, Núria Ferrer-Anglada, Capacitive tunnels in single-walled carbon nanotube networks on flexible substrate. Journal of Applied Physics, 063712, 111, 2012. (I.F=2.185) 28. M. Z. Iqbal, Özgür Kelekçi, M. W. Iqbal, Xiaozhan Jin, Chanyong Hwang, Jonghwa Eom, Enhanced intervalley scattering in artificially stacked double layer graphene, New Journal of Physics, 083020, 16, 2014. (I.F=3.673)

29. M. F. Khan, M. Z. Iqbal, M. W. Iqbal, Jonghwa Eom, Improving electrical properties of graphene by chemical doping, Science and Technology of Advanced Materials, 2014. (I.F=3.433) 30. M. Z. Iqbal, M. F. Khan, M. W. Iqbal, Jonghwa Eom, Tuning the electrical properties of exfoliated graphene layers by deep ultraviolet irradiation, Journal of Materials Chemistry C, 5404-5410, 2, 2014. (I.F=4.696) 31. M. Z. Iqbal, O. Kelekci, M.W. Iqbal, Jonghwa Eom, The structural and electrical evolution of chemical vapor deposition grown graphene by electron beam irradiation induced disorder, Carbon, 361-377, 59, 2013. (I.F=6.638) 32. M. Z. Iqbal, S. Siddique, M. W. Iqbal, Jonghwa Eom, Formation of p–n junction with stable p-doping in graphene field effect transistors using deep UV irradiation, Journal of Materials Chemistry C, 3078-3083, 1, 2013. (I.F=4.696) 33. M. Z. Iqbal, A. K. Singh, M. W. Iqbal, Sunae Seo, Jonghwa Eom, Effect of e-beam irradiation on graphene layer grown by chemical vapor deposition, Journal of Applied Physics, 111, 084307, 2012. (I.F=2.185) 34. J. Choi, H. Kim, J. Park, M. W. Iqbal, M. Z. Iqbal, Jonghwa Eom, Jongwan Jung, Enhanced performance of graphene by using gold film for transfer and masking process, Current Applied Physics, 1045-1050, 4(8), 2014. (I.F=2.026) 35. M. Farooq Khan, M. Zahir Iqbal, M. Waqas Iqbal, Vladimir M. lermolenko, H. M. Waseem Khalil, Jungtae Nam, Keun Soo Kim, Hwayong Noh and Jonghwa Eom. Stable and reversible doping of graphene by KNO3 and photo-desorption current response. RSC Advances. (I.F=3.84)

36. V. K. Singh, AK Singh, M. W. Iqbal, J Eom, JR Yeon, K Shin - Direct Synthesis of Multilayer Sheets of Reduced Graphene Oxide Over Cu-Foil. Graphene,1, 67, 2013. (I.F=2.23)

Submitted/In preparation manuscripts:1. M. W. Iqbal, M. Farooq Khan, M. Zahir Iqbal, Ghazanfar Nazir, Vladimir M. lermolenko, and Jonghwa Eom. Deep-Ultraviolet-Light-Driven Reversible Doping of MoTe2 Field-Effect Transistor. In preparation 2. M. Z. Iqbal, M. F. Khan, M. W. Iqbal, Jonghwa Eom, Gate tunable controlled tunneling through graphene-boron nitride hybrid structures, Submitted. 3. Muhammad Arshad Kamran, Ghulam Nabi, Abdul Majid, Muhammad Waqas Iqbal, Thamer Alharb, Yongyou Zhang, and Bingsuo Zou, High Quality Te-Doped CdS Nanowires: Synthesis and Impact of Te ions on Photoluminescence and Carrier Transport. Submitted.

Conference Presentations/Attended:-

1. Oral presentation, Ambipolar bistable switching effects in CVD graphene devices, The 9th International Nanotech Symposium & Exhibition in Korea: Nano Korea 2011, 2011-08 2. Energy Band-Gap Induced in Nanoconstriction Graphene Devices, The 7th International Conference on Advanced Materials and Devices, 2011-12, Ramada Plaza Jeju Hotel, Jeju, South Korea. 3. Oral presentation, Doping effect on graphene by metal adsorbates, Korea Physical Society Fall 2012,2012-10

4. Reversible p-type doping of lithographically patterned nanoconstriction graphene devices, Korea Physical Society 2013 Spring Conference Papers Conference (Korea Physical Society), 2013-04 5. Poster presentation, A platform for large-scale graphene devices: CVD grown graphene on CVD grown hexagonal BN film, The 5th International Conference on Recent Progress in Graphene Research(Tokyo Institute of Technology), 2013-09 6. Poster presentation Environmental sensitivity effect of large area CVD grown graphene on Hexagonal Boron Nitride films, The 8th International Conference on Advanced Materials and Devices,The Korean Physical Society meeting at Daejeon convention centre, April 24-26, 2013, Daejeon, South Korea. 7. Oral presentation, Deep-Ultraviolet-Light-Driven Reversible Characteristics Tuning of WS2 Field-Effect Transistor, Korea Physical Society Fall 2014 2014-10 8. Poster presentation, Modification of the structural and electrical properties of graphene layers by Pt adsorbates, ENGE 2014: International Conference on Electronic Materials and Nanotechnology for Green Environment,2014-11 9. Attended Graphene workshop, Korean Research Institute of Standards and Science (KRISS) meeting, July, 2011, Anmyeondo, South Korea. 10. Attended Graphene workshop, Korean Research Institute of Standards and Science (KRISS) meeting, July, 2012, Anmyeondo, South Korea. 11. Oral presentation, Environmental sensitivity effect of large area CVD grown graphene on Hexagonal Boron Nitride films, Graphene workshop, KRISS, July 5-6, 2013, Jeju, South Korea 12. Poster presentation, Energy Band-Gap Induced in Nanoconstriction Graphene Devices Annual poster competition at Dept. of Physics Sejong University, October, 2012.

13. Poster presentation, Deep-Ultraviolet-Light-Driven Reversible Characteristics Tuning of WS2 Field-Effect Transistor, Annual poster competition at Dept. of Physics Sejong University, October, 2014. 14. Oral presentation, High-mobility and air-stable single-layer WS2 field-effect transistors sandwiched between chemical vapor deposition-grown hexagonal BN films, Korea Physical Society Spring 2015.

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